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Single crystal boron-doped diamond synthesis

: Grotjohn, T.A.; Nicley, S.; Iran, D.; Reinhard, D.K.; Becker, M.; Asmussen, J.

Bergonzo, P. ; Materials Research Society -MRS-:
Diamond electronics and bioelectronics - fundamentals to applications III : Symposium held November 30 - December 3, 2009, Boston, Massachusetts, U.S.A.; Symposium J, "Diamond Electronics and Bioelectronics - Fundamentals to Applications III," held at the 2009 MRS fall meeting
Warrendale, Pa.: MRS, 2010 (Materials Research Society Symposium Proceedings 1203)
ISBN: 978-1-605-11176-6
ISSN: 0272-9172
Symposium J "Diamond Electronics - Fundamentals to Applications" <3, 2009, Boston/Mass.>
Materials Research Society (Fall Meeting) <2009, Boston/Mass.>
Fraunhofer ILT ()

The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.