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Probing the strain states in nanopatterned strained SOI

: Moutanabbir, O.; Reiche, M.; Hähnel, A.; Erfurth, W.; Naumann, F.; Petzold, M.; Gösele, U.


Kolbesen, B.O. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Analytical techniques for semiconductor materials and process characterization 6. ALTECH 2009 : Symposium on "Analytical Techniques for Semiconductor Materials and Process Characterization VI" was held at the 216th meeting of the Electrochemical Society in Vienna from October 4 to 9, 2009
Pennington, NJ: ECS, 2009 (ECS transactions 25, 3)
ISBN: 978-1-566-77740-7
ISBN: 978-1-60768-090-1
ISSN: 1938-5862
Symposium "Analytical Techniques for Semiconductor Materials and Process Characterization" (ALTECH) <6, 2009, Vienna>
Electrochemical Society (Meeting) <216, 2009, Vienna>
Fraunhofer IWM ()

Using strained SOI as a strategy to enhance the performance of Si-based electronic devices raises fundamental questions about the stability of the strain during different processing steps. In this work, we elucidate the influence of nanoscale pattering, a crucial step in device fabrication, on the strain states. UV micro-Raman and high resolution transmission electron microscopy were employed to quantify the strain in the strained layers. Post-patterning strain in different nanostructures was evaluated by UV micro-Raman. Our data demonstrate that the formation of free surfaces upon pattering leads to a partial relaxation of the strain. The extent of the relaxation was found to depend on the lateral dimension and the geometry. A detailed mechanistic picture is presented based on 3D finite element simulations.