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Boron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures

: Ramamurti, R.; Becker, M.; Schuelke, T.; Grotjohn, T.; Reinhard, D.; Swain, G.; Asmussen, J.


Diamond and Related Materials 17 (2008), Nr.4-5, S.481-485
ISSN: 0925-9635
Fraunhofer ILT ()

Boron doped diamond is deposited over a range of pressures and chemistries including pressures from 35-120 Torr and gas chemistries including hydrogen-methane-diborane and argon-methane-hydrogen-diborane mixtures. The diamond deposition system is a 2.45 GHz microwave resonant cavity system. Diborane (B2H6) gas chemistry has been utilized with flow rates of 2.5-100 ppm. At low pressures of 35 Torr polycrystalline films are deposited using a feed gas mixture of hydrogen and 0.5% methane. At moderate pressures of 95 Torr, diamond films are grown using 60% Ar, 39% H2 and 1% CH4. For the high pressure experiments of 120 Torr, polycrystalline films are deposited using 98% H2 and 2% CH4. The deposition rate ranges from 0.3 to 1.6 m/h. This investigation describes the relationship of the diborane flow rate and pressure versus the resulting film morphology, electrical properties, and morphology of the deposited films. The deposition of boron-doped polycrystalline diamond is done on 5 cm diameter silicon and silicon dioxide coated substrates. The resistivity spatial variation across the wafer was ± 5% indicating a good uniformity.