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Microwave plasma-assisted etching of diamond

: Tran, D.T.; Grotjohn, T.A.; Reinhard, D.K.; Asmussen, J.


Diamond and Related Materials 17 (2008), Nr.4-5, S.717-721
ISSN: 0925-9635
Fraunhofer ILT ()

Experimental results are presented for the microwave plasma-assisted dry etching of ultrananocrystalline (UNCD), polycrystalline and single crystal diamond materials. A high-rate and anisotropic etching process is developed using a 2.45 GHz microwave plasma reactor. The plasma discharge in this system measures 25 cm in diameter and is located inside a 30 cm diameter microwave cavity applicator. The system is an electron cyclotron resonance (ECR) plasma source operating at pressures of 1-100 mTorr. The process chemistries include mixtures of oxygen, sulphur hexafluoride, and argon. Anisotropic etching profiles have been demonstrated and the measured etching rates range from 4-26 m/h.