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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. AlGaN/GaN power amplifiers for ISM frequency applications
| Institute of Electrical and Electronics Engineers -IEEE-:
41st European Solid-State Device Research Conference, ESSDERC 2011. Proceedings : Helsinki, September 12 - 16, 2011
Piscataway, NJ: IEEE Service Center, 2011
ISBN: 978-1-4577-0707-0 (Print)
ISBN: 978-1-4577-0706-3 (Online)
ISBN: 978-1-4577-0708-7
S.283-286 |
| European Solid-State Device Research Conference (ESSDERC) <41, 2011, Helsinki> |
|
| Englisch |
| Konferenzbeitrag |
| Fraunhofer IAF () |
Abstract
In this paper we report on the development of an RF high power amplifier, based on normally-on AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on semi-insulating SiC substrates. The amplifier is derived from a transistor with a total gate periphery of 120 mm that exhibits a breakdown voltage of 600 V. The transistor shows excellent DC characteristics up to 53 A in pulsed mode. The realized amplifier shows good performance in continuous wave (CW) mode with an output power of 139 W and an efficiency of 71 % at a frequency of 13.56 MHz, respectively. In pulsed mode, the amplifier exhibits an output power of 431 W for a duty cycle of 10 % which emphasizes the potential of the AlGaN/GaN material system for ISM applications. The comparison of the obtained values with silicon-based semiconductor devices furthermore shows the impressive advantages of AlGaN/GaN-based devices for parameters
like current density and power density that are for AlGaN/GaNbased devices by an order of magnitude higher.