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Fully integrated 300 GHz receiver S-MMICs in 50 nm metamorphic HEMT technology

: Tessmann, A.; Massler, H.; Lewark, U.J.; Wagner, S.; Kallfass, I.; Leuther, A.


IEEE Electron Devices Society; IEEE Solid-State Circuits Society; IEEE Microwave Theory and Techniques Society:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC 2011 : 16-19 October 2011, Waikoloa, Hawaii
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-61284-711-5 (Print)
ISBN: 978-1-61284-710-8 (Online)
ISBN: 978-1-61284-712-2
4 S.
Compound Semiconductor Integrated Circuit Symposium (CSICS) <33, 2011, Waikoloa/Hawai>
Fraunhofer IAF ()
grounded coplanar waveguide; H-band; heterodyne receiver; low-noise amplifier (LNA); metamorphic high electron mobility transistor; resistive mixer; S-MMIC

Two fully integrated H-band (220–325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC)heterodyne receivers have been successfully developed, based on a 50 nm metamorphic high electron mobility transistor (mHEMT) technology. A fabricated fundamental downconversion receiver achieved a conversion gain of more than 11 dB in the frequency range from 270 to 310 GHz with an LO-power of only -12 dBm. Furthermore, a subharmonic receiver S-MMIC was developed, consisting of an active frequency multiplier by three, a two-stage driver amplifier, a single-ended resistive mixer, and a four-stage low-noise amplifier, demonstrating a conversion gain of more than 12 dB from 290 to 320 GHz with a subharmonic LO-power of 8 dBm. Grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of less than 1.25 mm2.