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2011
Conference Paper
Titel
Fully integrated 300 GHz receiver S-MMICs in 50 nm metamorphic HEMT technology
Abstract
Two fully integrated H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC)heterodyne receivers have been successfully developed, based on a 50 nm metamorphic high electron mobility transistor (mHEMT) technology. A fabricated fundamental downconversion receiver achieved a conversion gain of more than 11 dB in the frequency range from 270 to 310 GHz with an LO-power of only -12 dBm. Furthermore, a subharmonic receiver S-MMIC was developed, consisting of an active frequency multiplier by three, a two-stage driver amplifier, a single-ended resistive mixer, and a four-stage low-noise amplifier, demonstrating a conversion gain of more than 12 dB from 290 to 320 GHz with a subharmonic LO-power of 8 dBm. Grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of less than 1.25 mm2.
Author(s)