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Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications

Multiwafer Epitaxie von GaN/AlGaN Heterostrukturen für Leistungs-Anwendungen
: Köhler, K.; Müller, S.; Rollbühler, N.; Kiefer, R.; Quay, R.; Weimann, G.

Ilegems, M.; Weimann, G.; Wagner, J.:
Compound Semiconductors 2002, ISCS : Proceedings of the 29th International Symposium on Compound Semiconductors
Bristol: IOP Publishing, 2003 (IOP Conference Series 174)
ISBN: 0-7503-0942-3
International Symposium on Compound Semiconductors (ISCS) <29, 2002, Lausanne>
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; heterostructure; Heterostruktur; electrical; elektrisch; devices; Bauelement

Heterostructures of GaN/AlGaN for power applications are grown by metal organic vapor phase epitaxy in a multiwafer reactor on sapphire and SiC substrates. Electrical properties of the two-dimensional electron gas are discussed. The sheet carrier concentration was varied from 4x1012 cm-2 to 1.5x1013 cm-2 by modulation doping. From electrical and material properties we show the excellent uniformity of the wafers. The influence of the Al content on the sheet carrier concentration is demonstrated. A maximum electron mobility of 1500 cm2/Vs is achieved for an undoped sample. Device fabrication was done on full 2" wafers b electron-beam and contact lithography. The quality of the grown epi layers and the technology is confirmed by CW load pull measurements at 2 GHz and 10 GHz.