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Temperature sensitivity of high power GaSb based 2 µm diode lasers

Temperaturempfindlichkeit von GaSb-basierenden 2 µm Diodenlasern
: Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.

Ilegems, M.; Weimann, G.; Wagner, J.:
Compound Semiconductors 2002, ISCS : Proceedings of the 29th International Symposium on Compound Semiconductors
Bristol: IOP Publishing, 2003 (IOP Conference Series 174)
ISBN: 0-7503-0942-3
International Symposium on Compound Semiconductors (ISCS) <29, 2002, Lausanne>
Fraunhofer IAF ()
diode laser; Diodenlaser; infrared laser; Infrarot-Laser; high-power laser; Hochleistungslaser; GaInAsSb; AlGaAsSb; GaSb

We have realized strained triple-quantum-well, large-optical-cavity GaInSb/AlGaAsSb/GaSb diode lasers emitting in the 2 µm wavelength range. In order to optimize these devices for power applications, we investigate samples at 2.2 µm wavelength with different Al-content in the barrier and seperate confinement layers, and thus different quantum-well barrier heights. Devices with 40 % Al revealed the highest value for the characteristic temperature T0, which is attributed to a reduction in the heterobarrier leakage. On the other hand, the lasers with 20 % Al yielded the best power efficiency eta rho with a maximum value of 30 %, reducing the thermal load generated in the active region and making this device structure well suited for power applications.