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InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications

 
: Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O.

6th European Microwave Integrated Circuits Conference, EuMIC 2011. Proceedings : European Microwave Week, 10-11 October 2011, Manchester, UK
Manchester, 2011
ISBN: 978-2-87487-023-1
S.69-72
European Microwave Integrated Circuits Conference (EuMIC) <6, 2011, Manchester>
European Microwave Week <2011, Manchester>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
InAIGaN; GaN; MMIC; high-power amplifier

Abstract
Wideband ampli\'02ers for the next generation of T/R modules in future active array antennas are realized as
monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT)
structures. All designs are realized in microstrip transmission line technology. The wideband ampli\'02er MMICs operate up to a frequency of 18 GHz. A number of measurements have been performed, including small signal S-parameter and large signal power measurements.
To our knowledge, these are the \'02rst MMICs based on InAlGaN/GaN HEMTs epitaxy for wideband applications in microstrip transmission line technology.

: http://publica.fraunhofer.de/dokumente/N-183677.html