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Low-temperature grown high-quality piezoelectric AIN Film for sensor application

 
: Sah, R.E.; Bludau, O.; Röhlig, C.-C.; Kirste, L.; Cimalla, V.; Lebedev, V.

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Aguilar, Z. ; Electrochemical Society -ECS-:
Sensors, Actuators, and Microsystems (General) - 219th ECS Meeting : General session held as part of the 219th meeting of the Electrochemical Society (ECS), May 1-6, 2011, Montreal, QC, Canada
Pennington, NJ: ECS, 2011 (ECS transactions 35.2011, Nr.30)
ISBN: 978-1-607-68290-5
ISBN: 978-1-56677-9326
S.35-43
Conference "Sensors, Actuators, and Microsystems" <2011, Montreal>
Electrochemical Society (Meeting) <219, 2011, Montreal>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
Aluminum nitride thin films grown at low temperature (< 200°C) on Si(001) using radio frequency (RF) sputter deposition technique have been characterized by measuring infrared (IR) spectra, breakdown voltage, and crystallographic orientation. The fullwidth-at-half-maximum of the E1(TO) mode in the IR measurement has been found to decrease for higher RF power. The breakdown electric field strength under dc voltage is around 5 MV/cm. The Xray
diffraction measurements indicated negligible change in the tilt of the film crystallites following annealing for 1 h in vacuum at 1000°C. Cantilevers that can be used both as pressure/force or inertial sensors and actuators have been fabricated from our lowtemperature grown, thermally stable films.

: http://publica.fraunhofer.de/dokumente/N-183671.html