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Polarization dependent study of gain anisotropy in semipolar InGaN lasers

: Rass, J.; Wernicke, T.; Ploch, S.; Brendel, M.; Kruse, A.; Hangleiter, A.; Scheibenzuber, W.; Schwarz, U.T.; Weyers, M.; Kneissl, M.


Applied Physics Letters 99 (2011), Nr.17, Art.171105, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()

The optical gain of single quantum well laser structures on semipolar (1122)-GaN in dependence of the optical polarization and the resonator orientation has been studied by variable stripe length method. The c'-[1123] resonator shows maximum gain in TE mode, followed by the m-[1100]-resonator with extraordinary polarization. The anisotropic gain behaviour is explained by valence sub-band ordering and birefringence of the wurtzite crystal, resulting in a modification of the transition matrix element for stimulated emission. Measurements are accompanied by 6 x 6 k . p band structure calculations and gain analysis.