Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Simulation of plasma immersion ion implantation

Simulation von Plasma-Immersions-Ionenimplantation
 
: Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.

:
Postprint urn:nbn:de:0011-n-1833606 (463 KByte PDF)
MD5 Fingerprint: bc53cab8f111e63edb1c0058ca8eb10d
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 27.10.2011


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 : 8-10 September 2011, Osaka, Japan
New York, NY: IEEE, 2011
ISBN: 978-1-61284-419-0
ISBN: 978-1-61284-416-9
S.231-234
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2011, Osaka>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
plasma immersion; ion implantation; simulation

Abstract
Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1E15 to 1E17 cm-2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.

: http://publica.fraunhofer.de/dokumente/N-183360.html