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A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology

 
: Kallfass, I.; Quay, R.; Massler, H.; Wagner, S.; Schwantuschke, D.; Haupt, C.; Kiefer, R.; Ambacher, O.

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IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2011 : June 5 - 10, 2011, Baltimore Convention Center
New York, NY: IEEE, 2011
ISBN: 978-1-61284-754-2 (Print)
ISBN: 978-1-61284-757-3
ISBN: 978-1-61284-756-6 (Online)
4 S.
International Microwave Symposium (IMS) <2011, Baltimore/Md.>
Deutsch
Konferenzbeitrag
Fraunhofer IAF ()
MMIC; millimeter-wave amplification; millimeter-wave frequency conversion; millimeter-wave FET integrated circuits; millimeter-wave GaN HEMT; 77 GHz; E-band

Abstract
The paper presents the design, implementation and measured performance of a 77 GHz heterodyne receiver MMIC
realized in a new AlGaN/GaN on s.i. SiC HEMT technology with 100 nm gate length and maximum cutoff frequencies fT and f(max) of 80 and >200 GHz, respectively. The compact single-chip receiver combines a four-stage low noise amplifier with a resistive down-conversion mixer and a frequency doubler stage for LO generation. At 77 GHz RF frequency, it achieves a conversion gain of 11 dB when driven with 10 dBm of LO power at 38.5 GHz. The saturated IF output power, without any post-amplification, is more than 1 dBm. The receiver is dedicated to radar systems with high linearity requirements and high robustness from strong interferers or reflected signals.

: http://publica.fraunhofer.de/dokumente/N-183350.html