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2000
Conference Paper
Titel
Technology and performance of AlGaN/GaN HEMTs fabricated on 2-inch epitaxy for microwave power applications
Alternative
Technologie und Leistung von AlGaN/GaN HEMTs prozesiert auf zwei Zoll Epitaxie-Substraten für Mikrowellen Leistungsanwendungen
Abstract
Processing technology for AlGaN/GaN HEMTs fabricated by 2-inch stepper lithography was developed. The performance of HEMTs is evaluated, showing a very good uniformity of electrical properties over the wafer, which is superior to devices from contact lithography. For rf-power applications, scaling rules cannot be deduced by simple geometric considerations. Reductions due to limited heat dissipation need to be taken into account.
Author(s)