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High-brightness 1040 nm tapered diode laser

Hochbrillante trapezförmige Diodenlaser bei 1040 nm
 
: Kelemen, M.T.; Weber, J.; Rinner, F.; Rogg, J.; Mikulla, M.; Weimann, G.

:

Driessen, A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Laser diodes, optoelectronic devices, and heterogenous integration : 29 - 31 October 2002, Brugge, Belgium. Photonics Fabrication Europe
Bellingham/Wash.: SPIE, 2003 (SPIE Proceedings Series 4947)
ISBN: 0-8194-4742-0
S.252-260
Photonics Fabrication Europe <2002, Brugge>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
high-brightness; Brillanz; high-power laser; Hochleistungslaser; tapered laser; Trapezlaser; Laserdiode; lifetime; Lebensdauer; AlGaAs-InGaAs; semiconductor; Halbleiter

Abstract
Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as optical pumping of solid-state lasers, fiber amplifiers and medical treatment. When easy and low-cost fabrication is a further requirement, devices based on tapered gain sections are the most promising candidates. Low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 1040 nm were grown by molecular beam epitaxy. The lateral design consists of a tapered gain guided and a ridge-waveguide section having an overall length of 2.5 mm. An output power of more than 11 W in qcw mode, lifetimes of more than 20,000 h and a record value for the beam quality factor M2 of less than 1.5 up to a cw output power of 3.5 W are achieved resulting in an improved brightness of more than 255 MW/(cm2sr). In addition an external-cavity diode laser including a ridge-waveguide tapered amplifier structure is demonstrated to emit more than 2 W cw. The wavelength is tunable over a 60 nm range centered at 1020 nm. The beam quality parameter M2 remains below 1.4 for output powers of 1 W over the whole range demonstrating the nearly diffraction limited behaviour.

: http://publica.fraunhofer.de/dokumente/N-18220.html