Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Terahertz optical properties of thin doped contact layers in GaAs device structures

Optische Eigenschaften im Terahertzbereich dünner dotierter Kontaktschichten in GaAs Bauelementstrukturen
 
: Bauer, T.; Kolb, J.S.; Mohler, E.; Roskos, H.G.; Köhler, K.

:

Semiconductor Science and Technology 18 (2003), Nr.1, S.28-32
ISSN: 0268-1242
ISSN: 1361-6641
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; terahertz; Terahertzbereich; transmission

Abstract
We investigate the transmittance of thin doped GaAs layers in the terahertz (THz) frequency range taking into account multiple reflections. Our experimental and theoretical study aims at providing a guideline for designing the top-side contact layers for THz emitters and receivers with direct, antenna-free coupling of he radiation. It is shown that the surface conductivity of the contact layer is the determining factor for the THz transmittance.

: http://publica.fraunhofer.de/dokumente/N-18219.html