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Simulation and analysis of low-resistance AlGaN/GaN HFET power switches

: Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O.

Institute of Electrical and Electronics Engineers -IEEE-:
14th European Conference on Power Electronis and Applications, EPE 2011. Proceedings : Aug. 30 - Sep 1, 2011, Birmingham
New York, NY: IEEE, 2011
ISBN: 978-1-61284-167-0 (Print)
ISBN: 978-90-75815-15-3 (Online)
European Conference on Power Electronis and Applications (EPE) <14, 2011, Birmingham>
Fraunhofer IAF ()
finger structure; tapered metallization; current crowding; lateral power transistors; on-resistance

AlGaN/GaN HFETs yield excellent properties for highly-efficient power-switching devices. A key parameter of highly-efficient switches is the static on-state resistance of the transistor. This paper discusses the main parameters affecting the on-state resistance and in particular the influence of resistive metallization in lateral finger structures and large-area comb structures. Current crowding effects for finger structures are analytically analyzed and compared. Equations are developed and applied in practical examples and verified by two-dimensional finite element simulations. For lateral large-area comb structures different bond configurations are investigated. Furthermore, the two-dimensional simulations method has been applied on real structure layouts of a large-area power switch and the result of this simulation is compared to measurement results.