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2011
Conference Paper
Titel
Low noise amplifiers for G-band radiometers
Abstract
Six low noise amplifiers (LNAs) for three frequency ranges are presented. The amplifier circuits have been manufactured using a 100-nm gate length metamorphic high electron mobility transistor technology. Measured on-wafer performance shows 19-27 dB of gain and lowest noise figure values of 4 dB.
Author(s)