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A broadband low-noise D-band amplifier module in 35 nm mHEMT technology

: Weissbrodt, E.; Kallfass, I.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.; Ambacher, O.

European Space Agency -ESA-, Paris:
6th ESA Workshop on Millimetre-Wave Technology and Applications and the 4th Global Symposium on Millimeter Wave, GSMM 2011 : May 23rd - May 25th, 2011, Espoo, Finland
Noordwijk: ESA, 2011
4 S.
Workshop on Millimetre Wave Technology and Applications <6, 2011, Espoo>
Global Symposium on Millimeter Waves (GSMM) <6, 2011, Espoo>
Fraunhofer IAF ()

This paper presents a broadband low-noise amplifier MMIC in D-band (110-170 GHz), manufactured with the Fraunhofer IAF 35 nm metamorphic high electron mobility transistor (mHEMT) technology. The chip size is 1.0 × 2.0 mm(2) and it was packaged into a split-block module with integrated DC-control. Small-signal gain, noise figure and linearity were measured and the reported results demonstrate state of the art values of over 20 dB gain in a 50 GHz bandwidth, noise figure of below 4 dB and a 1-dB compression point of -22 dBm input power.