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FET-based frequency multiplier S-MMICs up to 440GHz

: Kallfass, I.; Massler, H.; Tessmann, A.; Leuther, A.

Electromagnetics Academy, Cambridge/Mass.:
PIERS 2011, Progress in Electromagnetics Research Symposium : March 20-23, 2011 Marrakesh, Morocco; Proceedings
Cambridge/Mass.: Electromagnetics Academy, 2011
ISBN: 978-1-934142-16-5
Progress in Electromagnetics Research Symposium (PIERS) <2011, Marrakesh>
Fraunhofer IAF ()

We report on the design and performance of frequency multiplier submillimeter-wave monolithic integrated circuits (S-MMICs) that operate up to 440 GHz. The S-MMICs are based on state-of-the-art metamorphic high electron mobility transistor technology (mHEMT) with gate lengths down to 35nm and cutooff frequencies f T and f max of 515 and 900 GHz, respectively. A class-B FET doubler circuit achieves -14.6dBm of output power at 400 GHz, when driven with 2.5dBm input power. An overview of mHEMT-based frequency multiplier performance in the entire millimeter-wave range is given.