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CMOS 3D image sensor based on pulse modulated Time-of-Flight principle and intrinsic lateral drift-field photodiode pixels

: Spickermann, A.; Durini, D.; Süss, A.; Ulfig, W.; Brockherde, W.; Hosticka, B.J.; Schwope, S.; Grabmaier, A.


Tenhunen, H. ; Institute of Electrical and Electronics Engineers -IEEE-:
37th European Solid-State Circuits Conference, ESSCIRC 2011. Proceedings : Helsinki, Finland, 12 - 16 September 2011
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-4577-0703-2 (Print)
ISBN: 978-1-4577-0706-3
ISBN: 978-1-4577-0702-5 (Online)
ISBN: 978-1-4577-0701-8
European Solid-State Circuits Conference (ESSCIRC) <37, 2011, Helsinki>
Fraunhofer IMS ()
time-of-flight; TOF; 3D imaging; LDPD; Sensor

Design and measurement results of a CMOS 128 x 96 pixel sensor are presented, which can be used for three-dimensional (3D) scene reconstruction applications based on indirect time-of-flight (ToF) principle enabled by pulse modulated active laser illumination. The 40µm pitch pixels are based on the novel intrinsic lateral drift-field photodiode (LDPD) that allows for a 30ns complete charge transfer from the photoactive area into the readout node, and accumulation of signal charge over several readout cycles for extended signal-to-noise ratio (SNR). Distance measurements have been performed using a specially developed camera system.