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Time-of-flight measurements of charge carrier diffusion in In(x)Ga(1-x)N/GaN quantum wells

: Danhof, J.; Schwarz, U.T.; Kaneta, A.; Kawakawi, Y.


Physical Review. B 84 (2011), Nr.3, Art. 035324, 5 S.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Fraunhofer IAF ()

Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of 0.25 ± 0.05 cm(2)/s.