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A fast and low actuation voltage MEMS switch for mm-wave and its integration

: Akiba, A.; Mitarai, S.; Morita, S.; Ikeda, I.; Kurth, S.; Leidich, S.; Bertz, A.; Nowack, M.; Froemel, J.; Gessner, T.


IEEE Electron Devices Society:
IEEE International Electron Devices Meeting, IEDM 2010 : San Francisco, 6 - 8 December 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-7418-9
ISBN: 978-1-4424-7418-5 (print)
ISBN: 978-1-4244-7419-6 (Online)
International Electron Devices Meeting (IEDM) <2010, San Francisco/Calif.>
Fraunhofer ENAS ()

A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 µs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 µm thick Al wires and 12 µm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.