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In-situ observation of ultrashort pulse deep drilling in silicon at 1030 nm and 515 nm

: Döring, S.; Richter, S.; Tünnermann, A.; Nolte, S.


Institute of Electrical and Electronics Engineers -IEEE-:
European Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO Europe/EQEC 2011). Vol.2 : Munich, Germany, 22 - 26 May 2011
Piscataway, NJ: IEEE, 2011
ISBN: 978-1-4577-0533-5
ISBN: 978-1-4577-0532-8
European Quantum Electronics Conference (EQEC) <12, 2011, Munich>
European Conference on Lasers and Electro-Optics (CLEO Europe) <2011, Munich>
Fraunhofer IOF ()

We compare direct observations of ultrashort-pulse deep-drilling in silicon at 1030nm and 515nm, revealing similar, three process phases. The maximum hole-depth is determined by the pulse energy. Enhanced lateral resolution is obtained with frequency-doubled radiation.