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Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs

 
: Mánuel, J.M.; Morales, F.M.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.

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Crystal growth and design 11 (2011), Nr.6, S.2588-2591
ISSN: 1528-7483
ISSN: 1528-7505
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
A complete structural and compositional study was carried out for a series of GaN-based lattice-matched HEMT structures. As barrier materials pseudomorphic to GaN, both ternary InAlN and quaternary InAlGaN were investigated. Growths were performed using molecular beam epitaxy on GaN/sapphire or GaN/SiC templates. An abrupt triple-layer AlN/GaN/AlN nanothin spacer at the interface is crucial to improve the structural and electrical properties of the heterostructures. In all cases, this resulted in single-crystalline and single-phase barrier layers.

: http://publica.fraunhofer.de/dokumente/N-173769.html