Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs

: Mánuel, J.M.; Morales, F.M.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.


Crystal growth and design 11 (2011), Nr.6, S.2588-2591
ISSN: 1528-7483
ISSN: 1528-7505
Fraunhofer IAF ()

A complete structural and compositional study was carried out for a series of GaN-based lattice-matched HEMT structures. As barrier materials pseudomorphic to GaN, both ternary InAlN and quaternary InAlGaN were investigated. Growths were performed using molecular beam epitaxy on GaN/sapphire or GaN/SiC templates. An abrupt triple-layer AlN/GaN/AlN nanothin spacer at the interface is crucial to improve the structural and electrical properties of the heterostructures. In all cases, this resulted in single-crystalline and single-phase barrier layers.