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Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

 
: Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.

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IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2011 : June 5 - 10, 2011, Baltimore Convention Center
New York, NY: IEEE, 2011
ISBN: 978-1-61284-754-2 (Print)
ISBN: 978-1-61284-757-3
ISBN: 978-1-61284-756-6 (Online)
4 S.
International Microwave Symposium (IMS) <2011, Baltimore/Md.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
AlGaN/GaN; cascode; dual-gate; HEMTs; Ku-Band; large-signal modeling; power amplifier; MMIC

Abstract
This paper reports on linear and nonlinear modeling and realization of AlGaN/GaN dual-gate HEMTs and high power amplifier (HPA) MMICs for Ku-band applications. A method to describe the extrinsic and intrinsic parts of the dual-gate structure separated from each other using a distributed modeling approach is demonstrated. A small-signal model based on this approach was developed. A scalable nonlinear model was obtained through enhancing the small-signal model by an intrinsic large-signal statespace kernel. The excellent capabilities of both the linear and nonlinear models are demonstrated on fabricated dual-gate HEMTs with 0.25 µm gate length and a total gate width between 0.3mm and 0.8mm with a varying number of fingers. A 14-18 GHz, 2.5W high power amplifier was designed and realized to illustrate the suitability of the developed models for MMIC design.

: http://publica.fraunhofer.de/dokumente/N-173766.html