Publica
Hier finden Sie wissenschaftliche Publikationen aus den FraunhoferInstituten. Modeling and realization of GaNbased dualgate HEMTs and HPA MMICs for Kuband applications
 IEEE Microwave Theory and Techniques Society: IEEE MTTS International Microwave Symposium, IMS 2011 : June 5  10, 2011, Baltimore Convention Center New York, NY: IEEE, 2011 ISBN: 9781612847542 (Print) ISBN: 9781612847573 ISBN: 9781612847566 (Online) 4 S. 
 International Microwave Symposium (IMS) <2011, Baltimore/Md.> 

 Englisch 
 Konferenzbeitrag 
 Fraunhofer IAF () 
 AlGaN/GaN; cascode; dualgate; HEMTs; KuBand; largesignal modeling; power amplifier; MMIC 
Abstract
This paper reports on linear and nonlinear modeling and realization of AlGaN/GaN dualgate HEMTs and high power amplifier (HPA) MMICs for Kuband applications. A method to describe the extrinsic and intrinsic parts of the dualgate structure separated from each other using a distributed modeling approach is demonstrated. A smallsignal model based on this approach was developed. A scalable nonlinear model was obtained through enhancing the smallsignal model by an intrinsic largesignal statespace kernel. The excellent capabilities of both the linear and nonlinear models are demonstrated on fabricated dualgate HEMTs with 0.25 µm gate length and a total gate width between 0.3mm and 0.8mm with a varying number of fingers. A 1418 GHz, 2.5W high power amplifier was designed and realized to illustrate the suitability of the developed models for MMIC design.