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Physical and electrical properties of MOCVD and ALD deposited HfZrO4 gate dielectrics for 32nm CMOS high performance logic SOI technologies

 
: Kelwing, T.; Mutas, S.; Trentzsch, M.; Naumann, A.; Trui, B.; Herrmann, L.; Graetsch, F.; Klein, C.; Wilde, L.; Ohsiek, S.; Weisheit, M.; Peeva, A.; Richter, I.; Prinz, H.; Wuerfel, A.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W.

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Kar, S. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division; Electrochemical Society -ECS-, Electronics and Photonics Division:
Physics and technology of high-k materials 8 : Presentations scheduled for the Eighth International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics, held Las Vegas, Nevada on October 11 to 15, 2010, during the 218th meeting of the Electrochemical Society
Pennington, NJ: ECS, 2010 (ECS transactions 33, 3)
ISBN: 978-1-566-77822-0 (Print)
ISBN: 978-1-60768-172-4
ISSN: 1938-5862
S.3-14
International Symposium on High Dielectric Constand and other Dielectric Materials for Nanoelectronics and Photonics <8, 2010, Las Vegas/Nev.>
Electrochemical Society (Meeting) <218, 2010, Las Vegas/Nev.>
Englisch
Konferenzbeitrag
Fraunhofer CNT ()

Abstract
The physical properties of metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) deposited HfZrO4 films have been analyzed in detail by atom probe tomography, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, transmission electron microscopy, atomic force microscopy, variable angle spectroscopic ellipsometry as well as temperature dependent grazing incidence X-ray diffraction. In addition we extend our recently presented electrical 32nm device results with MOCVD and ALD deposited HfZrO4 gate dielectrics by further evaluating 32 nm high performance logic devices on silicon on insulator (SOI) substrates with respect to interface trap charge densities Dit and time dependent dielectric breakdown (TDDB) reliability. All investigated parameters revealed a comparable behavior between ALD and MOCVD and therefore MOCVD is demonstrated to be a promising alternative to ALD in high volume manufacturing in this work.

: http://publica.fraunhofer.de/dokumente/N-173660.html