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High-quality ZrO2 /Si (001) thin films by a sol-gel process: Preparation and characterization

: Döscher, H.; Lilienkamp, G.; Iskra, P.; Daum, W.; Helsch, G.; Becker, S.; Wrobel, R.J.; Weiss, H.; Suchorski, Y.


Journal of applied physics 107 (2010), Nr.9, Art. 094103
ISSN: 0021-8979
ISSN: 1089-7550
Fraunhofer IZM ()

ZrO2 films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO2 films are stable against heating (up to 700°C) in a moderate oxygen atmosphere (2× 10-5 mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000°C.