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3D-integration of silicon devices: A key technology for sophisticated products

: Klumpp, A.; Ramm, P.; Wieland, R.

Association for Computing Machinery -ACM-, Special Interest Group on Design Automation -SIGDA-; IEEE Computer Society; IEEE Solid-State Circuits Society:
Design, Automation and Test in Europe 2010. Proceedings : ICC, Dresden, Germany, 8-12 March, 2010
New York, NY: IEEE, 2010
ISBN: 978-1-4244-7054-9
ISBN: 978-3-9810801-6-2
Design, Automation and Test in Europe Conference (DATE) <2010, Dresden>
Fraunhofer IZM ()

3D integration is a key solution to the predicted performance increase of future electronic systems. It offers extreme miniaturization and fabrication of More than Moore products. This can be accomplished by the combination of Through-Silicon-Via (TSV) technologies for shortened electrical signal lines and Solid Liquid Interdiffusion (SLID) for highly reliable assembly. Depending on the chosen technology concept, TSVs are filled with either tungsten or copper metal. Thinning of silicon as part of the process flow enables devices as thin as 30 m, so multilayer stacking will result in ultra-thin systems. All these 3D integration concepts focus on wafer level processing to achieve the highest miniaturization degree and highest processing reliability as well as enabling high volume cost-effective fabrication.