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3-D thin film interposer based on TGV (Through Glass Vias): An alternative to Si-interposer

: Töpper, M.; Ndip, I.; Erxleben, R.; Brusberg, L.; Nissen, N.; Schröder, H.; Yamamoto, H.; Todt, G.; Reichl, H.


IEEE Components, Packaging, and Manufacturing Technology Society; Electronic Industries Alliance -EIA-:
60th Electronic Components and Technology Conference, ECTC 2010. Proceedings. Part 1 : 1-4 June 2010, Las Vegas, NV, USA
New York, NY: IEEE, 2010
ISBN: 978-1-4244-6411-1
ISBN: 978-1-4244-6410-4
Electronic Components and Technology Conference (ECTC) <60, 2010, Las Vegas/Nev.>
Fraunhofer IZM ()

Interposers for SiP will become more and more important for advanced electronic systems. But through substrate vias are essential for the 3-D integration. Being a standard for laminate based materials this is much more complex for Si-wafers: High speed etching has to be combined with complex electrical isolation, diffusion barriers and void-free Cu-filling. Without doubt this can be solved in lab-scale but for high production scale cost is a tremendous barrier. Glass wafers with W-plugs have been intensively investigated in this paper. A new acronym has been posted to high-light this technology: TGV for Through Glass Vias. The results of modeling and simulation of TGV at RF/Microwave frequencies showed a very good compromise between wafer thickness, TGV-shape and via diameter for vertical metal plugs with 100 m diameters in 500 m thick glass wafer still very stable for thin film wafer processing without costly temporary wafer bonding processes. Therefore the HermeS® fro m Schott was chosen as the basis for a prototype of a bidirectional 4 × 10 Gbps electro-optical transceiver module. Thin film RDL and bumping of these wafers was possible without any modifications to Si-wafer. First thermal cycles showed very promising results for the reliability of this concept.