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Anodic bonding at low voltage using microstructured borosilicate glass thin-films

: Leib, J.; Hansen, U.; Maus, S.; Feindt, H.; Hauck, K.; Zoschke, K.; Toepper, M.


Institute of Electrical and Electronics Engineers -IEEE-; VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-:
3rd Electronics System Integration Technology Conference, ESTC 2010. Proceedings. Vol.2 : Berlin, Germany, 13 - 16 September 2010
New York, NY: IEEE, 2010
ISBN: 978-1-4244-8553-6
ISBN: 978-1-4244-8554-3
Electronics System Integration Technology Conference (ESTC) <3, 2010, Berlin>
Fraunhofer IZM ()

The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond layer. A glass layer with a thickness of 3-5 m is sufficient for a stable bond at very moderate bond parameters with bond voltages in the range of 30-60 V at standard bond temperatures of around 300°C and below. This enables the use of anodic bonding also for sensitive devices.