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Electron backscatter diffraction microstructure investigations of electronic materials down to the nanoscale

: Krause, M.; März, B.; Dresbach, C.; Petzold, M.


Institute of Electrical and Electronics Engineers -IEEE-; VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-:
3rd Electronics System Integration Technology Conference, ESTC 2010. Proceedings. Vol.1 : Berlin, Germany, 13 - 16 September 2010
New York, NY: IEEE, 2010
ISBN: 978-1-4244-8553-6
ISBN: 978-1-4244-8554-3
Electronics System Integration Technology Conference (ESTC) <3, 2010, Berlin>
Fraunhofer IWM ()

In this paper, the application of electron backscatter diffraction (EBSD) methods to materials used for common microelectronic interconnection technologies is demonstrated with particular emphasis to lead-free soldered interfaces and thermosonic wire bond interconnects. Here, the paper focuses on the quantitative analysis of grain orientation, grain size and grain distribution of SAC as well as gold, aluminum and copper bonding wire materials. In addition special attention is paid to high resolution analysis of the intermetallics formed in the interfaces of microelectronic packaging interconnects. The application and the potential of EBSD to detect the Cu/Sn, Ni/Sn and Au/Al intermetallics being practically relevant for soldering and wire bonding is demonstrated.