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Hydrogen doping of ZnO:Al films deposited by pulsed DC-sputtering of ceramic targets

: Ruske, F.; Sittinger, V.; Werner, W.; Szyszka, B.; Osten, K.-U. van; Dietrich, K.; Rix, R.

Society of Vacuum Coaters -SVC-, Albuquerque/NM:
Society of Vacuum Coaters. 48th Annual Technical Conference 2005. Proceedings : April 23 - 28, 2005, Denver, Colorado, USA
Albuquerque: SVC, 2005
Society of Vacuum Coaters (Annual Technical Conference) <48, 2005>
Fraunhofer IST ()

We report on pulsed DC magnetron sputtering of ceramic ZnO:Al targets and how the resistivities obtained can be lowered by hydrogen doping. While resistivities of 300 to 400 cm were obtained by annealing in a hydrogen atmosphere, this technique seems rather inconvenient for production. The much simpler approach of adding hydrogen to the sputtering gas has shown to lower the resistivity to values of 500 cm where 700 cm have been obtained without hydrogen. While the lowered resistivity can be linked to increased carrier concentration, hydrogen also affects the crystal structure as observed by XRD. We observe a peak shift to lower angles indicating an increased lattice parameter. While the samples are stable at room temperature, hydrogen was found to diffuse out of the sample when annealed in air at 200°C. Here we found that the diffusion can be slowed down by adding yttria to the target material.