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Transport properties of microstructured MF-sputtered Zn 0.98Al0.02O

 
: Piechotka, M.; Elm, M.T.; Henning, T.; Szyszka, B.; Meyer, B.K.; Klar, P.J.

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Physica status solidi. C 7 (2010), Nr.6, S.1580-1582
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on II-VI Compounds <14, 2009>
Englisch
Zeitschriftenaufsatz
Fraunhofer IST ()

Abstract
We studied the effect of microstructuring on the electric transport properties of Zn0.98Al0.02O thin films (AZO) grown by reactive mid-frequency magnetron sputtering. A series of AZO wire arrays was prepared by photolithography followed by wet-chemical etching. The nominal wire width b was varied between 8 and 32 m. The wire arrays were characterized by scanning electron microscopy, atomic force microscopy, and temperature-dependent resistivity measurements. The extension z of the surface-layer affected by the microfabrication process and its effect on the electronic transport through the wire were assessed. z is determined by the grain structure of the sputtered layer and is independent of wire thickness and degree of under-etching.

: http://publica.fraunhofer.de/dokumente/N-172330.html