Options
2006
Conference Paper
Titel
Improvements in the passivation of P+-Si surfaces by PECVD silicon carbide films
Abstract
We present further results of a surface passivation study of p +-Si emitters by both intrinsic and boron-doped amorphous SiC x films, deposited in two different standard PECVD reactors. For comparison, thermally grown SiO2 and PECVD-SiNx layers with refractive indices of n=2.0 and n=2.4 were examined on the same test structures. While thermal SiO2 exhibits passivating properties comparable to those on n+-Si emitters, PECVD-SiNx is found to even deteriorate the surface passivation, especially after firing (without metal contacts). On the other hand, PECVD-SiCx yields, to our knowledge, the best p+-Si passivation so far obtained by an industrially relevant low temperature process. It is expressed by an implied Voc of 635 mV for a symmetrically 60 /sq BBr 3-diffused n-type Cz-wafer with a base resistivity of 4.6 cm.
Author(s)