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Capacitance-voltage characterization of silicon oxide and silicon nitride coatings as passivation layers for crystalline silicon solar cells and investigation of their stability against x-radiation

: Kopfer, J.M.; Keipert-Colberg, S.; Borchert, D.


Thin solid films 519 (2011), Nr.19, S.6525-6529
ISSN: 0040-6090
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Angewandte Optik und funktionale Oberflächen; Kristalline Silicium-Dünnschichtsolarzellen; Kristalline Silicium- Dünnschichtsolarzellen

In this work capacitance-voltage measurements of three different dielectric layers, thermal silicon oxide, plasma enhanced chemical vapor deposited (PECVD) silicon oxide, and PECVD silicon nitride, on p-type silicon have been performed in order to obtain characteristics as the energy distribution of the interface trap density and the density of fixed charges. Spatially resolved capacitance-voltage, ellipsometry and lifetime measurements revealed the homogeneity of layer and passivation properties and their interrelation. Additionally lifetime measurements were used to evaluate x-radiation induced defects emerged during electron beam evaporation for sample metallization.