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MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications

: Dimroth, F.; Lanyi, P.; Schubert, U.; Bett, A.W.

Journal of Electronic Materials 29 (2000), Nr.1, S.42-46
ISSN: 0361-5235
ISSN: 1543-186X
Fraunhofer ISE ()

Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga1-xInxAs buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies comparable to our best GaAs solar cells were measured. The best 1 cm2 cell with a bandgap energy of 1.18 eV has an efficiency of 22.6% at AM1.5 g and a short circuit current density of 36.4 mA/cm2. To our knowledge, this is the highest reported efficiency for a Ga0.83In0.17As solar cell.