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High C-doping of MOVPE grown thin AlxGa1-xAs layers for AlGaAs/GaAs interband tunneling devices

: Dimroth, F.; Schubert, U.; Schienle, F.; Bett, A.W.

Journal of Electronic Materials 29 (2000), Nr.1, S.47-52
ISSN: 0361-5235
ISSN: 1543-186X
Fraunhofer ISE ()

High hole concentrations in LP-MOVPE grown GaAs and AlGaAs layers can be achieved by intrinsic C-doping using TMGa and TMAl as carbon sources. Free carrier concentrations exceeding 1020 cm-3 were realized at low growth temperatures between 520-540 °C and V/III ratios <1.2. The C-concentration increases significantly with the Al-content in AlxGa1-xAs layers. We observed an increase in the atom- and free carrier concentration from 5·1019 cm-3 in GaAs to 1.5·1020 cm-3 in Al0.2Ga0.8As for the same growth conditions. Interband tunneling devices with n-type Si and p-type C-doped AlGaAs layers and barriers made of Al0.25Ga0.26In0.49P have been investigated.