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Advanced defect characterization by combining temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS)

: Rein, S.; Lichtner, P.; Warta, W.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-1721856 (263 KByte PDF)
MD5 Fingerprint: 26f2898b7357ab79c569e853d24cb742
Erstellt am: 26.10.2012

IEEE Electron Devices Society:
29th IEEE Photovoltaic Specialists Conference 2002. Proceedings : May 20-24, 2002 Hyatt Regency New Orleans New Orleans, Louisiana
New York, NY: IEEE, 2002
ISBN: 0-7803-7471-1
Photovoltaic Specialists Conference <29, 2002, New Orleans/La.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Apart from detecting the presence of electrically active defects, lifetime measurements allow for a direct identification of defects if the injection and temperature dependence is analyzed. Recent studies have revealed that Temperature Dependent Lifetime Spectroscopy (TDLS) and Injection Dependent Lifetime Spectroscopy (IDLS) are complementary: while the energy level Et is more easily gained from TDLS, IDLS is more adequate to determine the capture cross section ratio k=n/sigma;p. The present work demonstrates on intentionally metal-contaminated silicon that a complete defect characterization is achievable by combining IDLS and TDLS. Additionally, it is shown for the first time that k and the band half of the defect location can often be determined from TDLS alone if the entire TDLS-curve is modeled.