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GaSb-, InGaAsSb-, InGaSb-, InAsSbP- and Ge-TPV cells with diffused emitters

: Sulima, O.V.; Bett, A.W.; Dutta, P.S.; Mauk, M.G.; Müller, R.L.


IEEE Electron Devices Society:
29th IEEE Photovoltaic Specialists Conference 2002. Proceedings : May 20-24, 2002 Hyatt Regency New Orleans New Orleans, Louisiana
New York, NY: IEEE, 2002
ISBN: 0-7803-7471-1
Photovoltaic Specialists Conference <29, 2002, New Orleans/La.>
Fraunhofer ISE ()

GaSb thermophotovoltaic (TPV) cells are believed to be the most suitable choice for modern TPV generators, both in terms of efficiency and simplicity of the diffusion technology used. However, TPV cells with bandgaps (Eg) lower than GaSb are expected to be advantageous for low-temperature (< 1000°C) non-wavelength-selective TPV radiators because they provide more effective absorption of the blackbody infrared radiation. In this work, together with GaSb (Eg = 0.72 eV), semiconductors with a lower Eg - Ge (Eg = 0.66 eV), InGaSb (Eg = 0.60 eV), InGaAsSb (Eg = 0.55 eV) and InAsSbP (Eg = 0.39 eV) - were studied for TPV cells. InGaAsSb cells seem to be the most promising candidate to replace GaSb cells in the low-temperature TPV generators.