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Application of PECVD-SIC as intermediate layer in crystalline silicon thin-film solar cells

: Bau, S.; Janz, S.; Kieliba, T.; Schetter, C.; Reber, S.; Lutz, F.

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Fraunhofer ISE ()

We present first results on the application of PECVD silicon carbide as intermediate layer for crystalline silicon thin-film solar cells. Silicon carbide layers were deposited by PECVD and characterized by Auger spectrometry and SEM. The subsequent sample processing included high-temperature anneal, deposition of a silicon seeding layer by CVD, recrystallization of the seeding layer by zone-melting, epitaxial growth of the base layer and finally a solar cell process where conventional and one-side contact scheme were realized. All process steps were successfully accomplished but characterization of the samples revealed that the silicon carbide intermediate layers were partly damaged or perforated. Efficiencies up to 7.1% were reached using a conventional contact scheme.