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N-type multicrystalline silicon: A stable, high lifetime material

: Cuevas, A.; Riepe, S.; Kerr, M.J.; Macdonald, D.H.; Coletti, G.; Ferrazza, F.

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Fraunhofer ISE ()

An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3cm, 500s for 0.9cm and 100s for 0.36cm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.