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High external quantum efficiency from double heterostructure layers as selective emitters in thermophotonic systems

: Lin, K.; Catchpole, K.R.; Trupke, T.; Campbell, P.; Green, M.A.; Aberle, A.G.; Corkish, R.; Bett, A.W.; Dimroth, F.

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.A : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-0-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Fraunhofer ISE ()

One of the main disadvantages of thermophotovoltaics is the need for a highly perfect selective emitter or filter to achieve high conversion efficiency. Thermophotonics overcomes this through the use of a heated light emitting diode as an extremely selective emitter. To achieve net conversion of heat to electricity with thermophotonics, a LED with high external quantum efficiency is required. As the initial step to demonstrate this concept, an AlGaAs/GaAs double heterostructure was optically pumped with energy higher than bandgap at room temperature. An EQE of 80% was measured for a doped planar sample on a transparent substrate. To the authors' knowledge this is the highest EQE for a planar structure ever reported. The results for undoped samples agree well with independent thermal measurements and with simulation data from our photon ray-tracing model. The low surface recombination velocity implies that the sample quality is excellent.