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Industrial PVD metallization for high efficiency crystalline silicon solar cells

: Nekarda, J.; Reinwand, D.; Grohe, A.; Hartmann, P.; Preu, R.; Trassl, R.; Wieder, S.

Postprint urn:nbn:de:0011-n-1720692 (207 KByte PDF)
MD5 Fingerprint: faa1ddb5fb1090cec7e8d4c7d55ff244
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Erstellt am: 18.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.2 : Philadelphia, Pennsylvania, USA, 7 - 12 June 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2949-3
ISBN: 1-4244-2949-8
ISBN: 978-1-4244-2950-9
Photovoltaic Specialists Conference (PVSC) <34, 2009, Philadelphia/Pa.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this paper we present first results concerning different thermal evaporation processes for thin aluminum layers, which are carried out on a pilot system with a throughput of up to 540 wafers/h (156x156 mm2). To qualify the processes the deposited aluminum layers were evaluated with respect to homogeneity and conductivity. Additionally the effect of the different processes on the passivation quality of a thermally grown 100 nm thick SiO 2 was analyzed by means of lifetime measurements, indicating a negligible effect of the conducted process variations on the passivation quality. Finally high-efficiency silicon solar cells were prepared to determine the overall potential and to compare it with an electron beam (e-gun) evaporation process, which is used as a standard process in our laboratory. An efficiency of up to 21% was achieved by the high deposition rate technique performing at least as well as our standard high efficiency process.