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Highly reflective intermediate layers in crystalline silicon thin film solar cell

: Lindekugel, S.; Künle, M.; Janz, S.; Reber, S.


Wehrspohn, R.B. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Photonics for Solar Energy Systems III : 13.-15.4.2010, Brussels, Belgium
Bellingham, WA: SPIE, 2010 (Proceedings of SPIE 7725)
ISBN: 978-0-8194-8198-6
Paper 772506
Conference "Photonics for Solar Energy Systems" <3, 2010, Brussels>
Fraunhofer ISE ()

In this paper the applicability and efficiency of different intermediate layer (IL) stacks for the implementation in recrystallized wafer equivalent (RexWE) solar cells are investigated. The requirements for the IL in the RexWE concept are short term stability at temperatures above 1400°C, high reflectivity for wavelengths exceeding 600 nm, electrical conductivity and acting as a diffusion barrier against metallic impurities. Various combinations of stoichiometric SiC layers, silicon rich SiC layers and SiO2 layers were tested as IL stacks regarding their performance after a zone melting recrystallization (ZMR) process. For the first time, samples with an IL consisting of a SiC multilayer were recrystallized and successfully processed to solar cells.