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Evaluating the aluminum-alloyed p+-layer of silicon solar cells by emitter saturation current density and optical microspectroscopy measurements

: Woehl, R.; Gundel, P.; Krause, J.; Rühle, K.; Heinz, F.D.; Rauer, M.; Schmiga, C.; Schubert, M.C.; Warta, W.; Biro, D.

Postprint urn:nbn:de:0011-n-1720391 (833 KByte PDF)
MD5 Fingerprint: 7da1348a5785cae44e026443163efacd
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Erstellt am: 24.5.2013

IEEE transactions on electron devices 58 (2011), Nr.2, S.441-447
ISSN: 0018-9383
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung; Zellen und Module

Surface-passivated and surface-unpassivated aluminum-alloyed p +-layers are characterized. By varying the firing conditions and the thickness of the screen-printed aluminum paste, different sheet resistances Rsh of the p+-layer were fabricated. The emitter saturation current density J0eplotted versus Rsh follows distinctly different trends for the passivated and unpassivated samples. An aluminum paste with a boron additive achieves a much higher doping concentration and a lower sheet resistance but nevertheless follows the same J 0ecurves as the pure Al paste. The aluminum p+-layer was quantitatively analyzed with microphotoluminescence and FanoRaman measurements. The latter shows an increased defect recombination at the interface between the p+-layer and the moderately doped Si bulk. The lower ShockleyReadHall lifetime in this region can be attributed to a high defect concentration in the most highly doped layer, represents an impediment to the reduction of J 0efor Al- doped emitter regions, and needs to be optimized in future investigations.