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Generation of terahertz pulsed radiation from photoconductive emitters using 1060 nm laser excitation

: Hinkov, I.; Harzendorf, G.; Kluska, S.; Hinkov, B.; Kamaruzaman, K.; Beigang, R.; Heinrich, J.; Hoefling, S.; Forchel, A.

Institute of Electrical and Electronics Engineers -IEEE-:
IRMMW-THz 2007, Joint 32nd International Conference on Infrared and Millimeter Waves, and 15th International Conference on Terahertz Electronics. Vol.1 : City Hall, Cardiff, UK, 3rd - 7rd September, 2007
New York, NY: IEEE, 2007
ISBN: 1-4244-1438-5
ISBN: 978-1-4244-1438-3
International Conference on Infrared and Millimetre Waves <32, 2007, Cardiff>
International Conference on Terahertz Electronics <15, 2007, Cardiff>
Fraunhofer IPM ()

In this paper we report experimental results on the generation of broadband Terahertz (THz) radiation using photoconductive emitters on the base of low-temperature-grown (LT) InGaAs for excitation with 1060 nm wavelength. The material properties of the semiconductor layers were investigated and the emitter function optimised. As experimental arrangement we have used a THz time-domain-spectroscopy (TDS) system. The THz spectrum reaches up to 3 - 4 THz, the signal to noise ratio was more than one hundred.