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Deep trench etching in macroporous silicon application to photonic crystal gas sensing

 
: Wehrspohn, R.B.; Schweizer, S.L.; Geppert, T.; Lambrecht, A.

:

Schmuki, P.:
Porous semiconductors: a symposium held in memory of Vitali Parkhutik and Volker Lehmann : Papers from the talks presented at the International Symposium on Porous Semiconductors held in Honolulu, Hawaii as part of the 214th meeting of the Electrochemical Society, on October 12 - 17, 2008
Pennington: Electrochemical Society, 2008 (ECS transactions Vol.16, Nr.3)
ISBN: 978-1-566-77649-3
ISSN: 1938-5862
S.61-67
International Symposium on Porous Semiconductors <2008, Honolulu>
Meeting of the Electrochemical Society <214, 2008, Honolulu>
Englisch
Konferenzbeitrag
Fraunhofer IPM ()

Abstract
We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. The limits of this new process are simulated using electrostatic models and are verified experimentally. This new techniques enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics, as an example an photonic crystal gas sensor is shown.

: http://publica.fraunhofer.de/dokumente/N-171664.html