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Radiation-induced trapping and charge transport in a smectic liquid crystal

: Hudson, K.; Ellman, B.; Gettwert, V.; Getmanenko, Y.; Twieg, R.J.


Applied Physics Letters 87 (2005), Nr.15, Art. 152103, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer ICT ()

We have studied changes in the hole transport properties of a smectic liquid crystalline semiconductor resulting from high-energy electron irradiation. The "radiation doping" results in sharply increased shallow trap densities and the onset of nearly trap-limited hopping conduction. A simple semiquantitative model provides estimates of the trap lifetime and the irradiation energy required to create a single trap. Experimental techniques to overcome parasitic effects due to increased molecular ion densities in irradiated samples are also discussed.