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Effect of gate metal on reliability of metamorphic HEMTs

: Dammann, M.; Leuther, A.; Konstanzer, H.; Jantz, W.


Joint Electron Device Engineering Council -JEDEC-, Committee on GaAs Reliability and Quality Standards:
GaAs Reliability Workshop 2001. Proceedings : October 21, 2001, Baltimore, Maryland
Piscataway, NJ: IEEE Service Center, 2001
ISBN: 0-7908-0066-7
GaAs Reliability Workshop <2001, Baltimore/Md.>
Fraunhofer IAF ()

The influence of the gate metal on the reliability of metamorphic InAlAs/InGaAs HEMTs with a gate length of 0.12 µm was studied by biased accelerated life tests in air and in nitrogen. By replacing the Ti-Pt-Au gate by Pt-Ti-Pt-Au we found that the life time at 220°C can be increased at least by a factor of two. An activation energy of 1.5 eV and a life time of 1.1×106 h at 125°C in air were derived for MHEMTs with Pt-Ti-Pt-Au gate.